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Affiliation to an institute |
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Engineering
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» Electrical Engineering and Information Technology
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Researchers with cooperation |
| Institution |
City |
Category |
Country of origin |
| Infineon Technologies AG |
Neubiberg |
Company |
Germany |
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Most significant projects |
| Code |
Indication  |
Indication  |
Cooperation partners |
Funding sources/agencies |
Term |
| Nest-DC |
Neuartige elektronischen Leistungsschutzschalter für Gleichspannung im Bereich der erneuerbaren Energien und Bordnetze |
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Infineon Technolgies AG, Neubiberg; EADS, Ottobrunn; E-T-A GmbH, Altdorf, Siemens AG, ZT, München |
BMBF |
2013 - 2016 |
| LES-InduKOCH |
Innovative Schaltungskonzepte und Bauelemente |
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Infineon Technologies AG, Neubiberg; E.G.O. Elektro-Gerätebau GmbH, Oberderdingen |
BMBF |
2010 - 2013 |
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Agencies that have funded your research during the past five years (public institutions and foundations) |
» BMBF
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Funding sources during the past five years (enterprises) |
| Company name |
Country of origin |
Term |
| ABB AG |
Switzerland |
2009-2013 |
| Bosch Power Tec GmbH |
Germany |
2012-2013 |
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Most significant Publications |
SiC and GaN Devices - Competition or Coexistence?
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Type |
| Author(s) | N. Kaminski, O. Hilt | | Year | 2012 | | In | Proceedings of the CIPS’12 (ETG-Fachbericht 133) | | Pages | 393-403 |
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Conference Paper |
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State of the art and the future of wide band-gap devices
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Type |
| Author(s) | N. Kaminski | | Year | 2009 | | In | Proceedings of the EPE’09 | | Pages | 1-9 |
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Conference Paper |
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Dynamics of Incomplete Ionized Dopants and Their Impact on 4H/6H SiC Devices
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Type |
| Author(s) | M. Lades, W. Kaindl, N. Kaminski, E. Niemann, G. Wachutka | | Year | 1999 | | In | IEEE Transactions on Electron Devices | | Year | 46 | | Issue | 3 | | Pages | 598-604 | | Doi | 10.1109/16.748884 |
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Article |
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Experimental Characterization and Numerical Simulation of the Electrical Properties of Nitrogen, Aluminum, and Boron in 4H/6H-SiC
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Type |
| Author(s) | W. Kaindl, M. Lades, N. Kaminski, E. Niemann, G. Wachutka | | Year | 1999 | | In | Journal of Electronic Materials | | Year | 28 | | Issue | 3 | | Pages | 154-160 | | Doi | 10.1007/s11664-999-0006-1 |
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Article |
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SiC merged p-n Schottky rectifiers for high voltage applications
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Type |
| Author(s) | R. Held, N. Kaminski, E. Niemann | | Year | 1998 | | In | Material Science Forum | | Issue | 264-268 | | Pages | 1057-1060 | | Doi | 10.4028/www.scientific.net/MSF.264-268.1057 |
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Conference Paper |
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